Substrate cleaning device, substrate processing apparatus, substrate cleaning method and substrate processing method

ABSTRACT

An outer peripheral end of a substrate is held with a plurality of chuck pins provided at a spin plate abutting against a plurality of portions of the outer peripheral end of the substrate, and the spin plate is rotated about a rotation axis. A cleaning head is moved by a head moving mechanism while being pressed against a back surface of the substrate held by the plurality of chuck pins by the head moving mechanism, and foreign matter on the back surface of the substrate is removed by polishing with the cleaning head. A reaction force against a load applied to the back surface of the substrate by the cleaning head is generated in the substrate by auxiliary pins. Alternatively, the back surface of the substrate, which has been cleaned or is being cleaned by the cleaning head, is further cleaned by a cleaning brush.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. patent application Ser. No.15/398,119, filed Jan. 4, 2017, which claims the benefit of JapanesePatent Application Nos. 2016-017464, filed Feb. 1, 2016 and 2016-175300,filed Sep. 8, 2016, the contents of which are incorporated herein byreference.

BACKGROUND OF THE INVENTION Field of the Invention

The present invention relates to a substrate cleaning device and asubstrate processing apparatus that clean substrates and a substratecleaning method and a substrate processing method for cleaningsubstrates.

Description of Related Art

In a lithography process in manufacturing of a semiconductor device andthe like, a coating film is formed by supply of a coating liquid such asa resist liquid to an upper surface of a substrate. The coating film isexposed to exposure light and then developed, so that a predeterminedpattern is formed on the coating film. Cleaning processing is performedon the substrate before the exposure of the coating film (see JP2009-23800 A, for example).

In JP 2009-23800 A, a substrate processing apparatus having a cleaningdrying processing unit is described. In the cleaning drying processingunit, the substrate is rotated while being horizontally held by a spinchuck. In this state, particles and the like adhering to a surface ofthe substrate are cleaned away by supply of a cleaning liquid to asurface of the substrate. Further, contaminants adhering to an entireback surface and an outer peripheral end of the substrate are removed bycleaning of the entire back surface and the outer peripheral end of thesubstrate by the cleaning liquid and a cleaning brush.

BRIEF SUMMARY OF THE INVENTION

In recent years, it is desired that a finer pattern is formed on thesubstrate. In the case where foreign matter remains on the substrate,accuracy of pattern formation is reduced. Therefore, the foreign matterthat remains on the substrate is preferably and sufficiently removed.However, in the cleaning drying processing unit described in JP2009-23800 A, it is difficult to remove foreign matter firmly adheringto the back surface of the substrate, a coating film that is formed whenthe coating liquid flows to the back surface of the substrate, foreignmatter mixed with the coating film and the like.

An object of the present invention is to provide a substrate cleaningdevice and a substrate processing apparatus capable of removing foreignmatter adhering to a back surface of a substrate, and a substratecleaning method and a substrate processing method by which the foreignmatter adhering to the back surface of the substrate can be removed.

One substrate cleaning device that cleans a back surface of a substrateincludes a rotation holder that holds and rotates the substrate, and acleaner that cleans the back surface of the substrate held by therotation holder, wherein the rotation holder includes a rotator providedto be rotatable about a rotation axis, a plurality of holders providedat the rotator to be capable of abutting against a plurality of portionsof an outer peripheral end of the substrate and holding the substrate,and the cleaner includes a cleaning tool provided to be capable ofremoving foreign matter on the back surface of the substrate bypolishing, a mover that moves the cleaning tool while pressing thecleaning tool against the back surface of the substrate held by theplurality of holders, and a reaction force generator that generates areaction force in the substrate against a load applied to the backsurface of the substrate by the cleaning tool.

In this substrate cleaning device, the back surface of the substrateheld and rotated by the rotation holder is cleaned by the cleaner. Inthe rotation holder, the outer peripheral end of the substrate is heldwith the plurality of holders provided at the rotator abutting againstthe plurality of portions of the outer peripheral end of the substrate.Further, the rotator is rotated about the rotation axis. In the cleaner,the cleaning tool is moved while being pressed by the mover against theback surface of the substrate held by the plurality of holders of therotation holder. The reaction force against the load applied to the backsurface of the substrate by the cleaning tool is generated in thesubstrate by the reaction force generator. Foreign matter on the backsurface of the substrate is removed by polishing with the cleaning tool.

In this configuration, the load applied to the back surface of thesubstrate by the cleaning tool during cleaning is resisted by thereaction force generated by the reaction force generator. Therefore,even when the cleaning tool is pressed against the back surface of thesubstrate, the substrate is prevented from bending. Thus, the cleaningtool can uniformly abut against the back surface of the substrate, and auniform load can be applied to the back surface of the substrate forsufficient cleaning. As a result, foreign matter firmly adhering to theback surface of the substrate, the coating film that is formed when thecoating liquid flows to the back surface of the substrate, foreignmatter mixed with the coating film and the like can be reliably removed.

The reaction force generator may include a plurality of abutmentsprovided at the rotator to abut against a plurality of portions of theouter peripheral end of the substrate, and the plurality of abutments,when a load is applied to the back surface of the substrate by thecleaning tool, may generate a reaction force in the outer peripheral endof the substrate against the load. In this case, the reaction forceagainst the load applied to the back surface of the substrate can begenerated by the abutments with a simple configuration.

The outer peripheral end of the substrate may have a bevel portion closeto a surface to be processed, a bevel portion close to a back surfaceand an end surface, and each of the plurality of abutments may have anabutment surface that abuts against a plurality of portions of the bevelportion close to the surface to be processed of the substrate. In thiscase, it is possible to generate a reaction force against a load appliedto the back surface of the substrate by the abutments with a simpleconfiguration without damaging the coating film formed on the surface tobe processed of the substrate.

The plurality of holders may be provided to be switchable between asubstrate holding state and a substrate releasing state, the substrateholding state being a state where the plurality of holders abut againstthe plurality of portions of the outer peripheral end of the substrateand hold the substrate and the substrate releasing state being a statewhere the plurality of holders are spaced apart from the plurality ofportions of the outer peripheral end of the substrate, the rotationholder may further include a holder switcher that switches states of theplurality of holders between the substrate holding state and thesubstrate releasing state, each of the plurality of holders may passthrough a first region and a second region extending along the outerperipheral end of the substrate and be rotated about the rotation axisas the rotator is rotated, during cleaning of a center region except fora peripheral portion on the back surface of the substrate, the holderswitcher may bring the plurality of holders into the substrate holdingstate, and the mover may move the cleaning tool in the center region onthe back surface of the substrate, and during cleaning of the peripheralportion on the back surface of the substrate, the holder switcher maybring a holder positioned in the first region among the plurality ofholders during the rotation of the rotator into the substrate holdingstate and may bring a holder positioned in the second region among theplurality of holders during the rotation of the rotator into thesubstrate releasing state, and the mover may move the cleaning tool to aposition at the peripheral portion on the back surface of the substrateand in the second region.

In this case, during the cleaning of the peripheral portion on the backsurface of the substrate, the holder positioned in the second region isspaced apart from the outer peripheral end of the substrate. Thus, thecleaning tool can be arranged in the second region without interferingwith the holder. As a result, the peripheral portion on the back surfaceof the substrate can be efficiently cleaned.

Each abutment may be arranged between each set of two adjacent holderswhile abutting against a portion of the outer peripheral end of thesubstrate. In this configuration, even in the case where the holder isspaced apart from the outer peripheral end of the substrate in thesecond region, the two abutments adjacent to the holder abut againstportions of the outer peripheral end of the substrate. Thus, thereaction force against the load applied to the back surface of thesubstrate can be generated while efficiency of the cleaning of theperipheral portion on the back surface of the substrate is maintained.

The reaction force generator may include a suction configured to becapable of sucking the back surface of the substrate, and the suction,when a load is applied to the back surface of the substrate by thecleaning tool, may generate a reaction force against the load by suckingthe back surface of the substrate. In this case, it is possible togenerate the reaction force against the load applied to the back surfaceof the substrate without damaging the coating film formed on the surfaceto be processed of the substrate.

The cleaning tool may have a polishing surface facing the back surfaceof the substrate and an opening in the polishing surface, and thesuction may suck the back surface of the substrate through the openingof the cleaning tool. In this case, it is possible to polish the backsurface of the surface by the cleaning tool while sucking the backsurface of the substrate by the cleaning tool with a simpleconfiguration.

The suction may be configured to be capable of discharging foreignmatter by sucking the foreign matter removed by the cleaning tool. Inthis case, work for discharging foreign matter removed from the backsurface of the substrate by polishing to outside is unnecessary. Thus,efficiency of cleaning can be improved.

The cleaner may further include a cleaning brush that further cleans theback surface of the substrate, which has been cleaned or is beingcleaned by the cleaning tool. In this case, different types of foreignmatter adhering to the back surface of the substrate can beappropriately removed.

Another substrate cleaning device that cleans a back surface of asubstrate includes a rotation holder that holds and rotates thesubstrate, and a cleaner that cleans the back surface of the substrateheld by the rotation holder, wherein the rotation holder includes arotator provided to be rotatable about a rotation axis, and a pluralityof holders provided at the rotator to be capable of abutting against aplurality of portions of an outer peripheral end of the substrate andholding the substrate, and the cleaner includes a cleaning tool providedto be capable of removing foreign matter on the back surface of thesubstrate by polishing, a mover that moves the cleaning tool whilepressing the cleaning tool against the back surface of the substrateheld by the plurality of holders, and a cleaning brush that furthercleans the back surface of the substrate, which has been cleaned or isbeing cleaned by the cleaning tool.

In this substrate cleaning device, the back surface of the substrateheld and rotated by the rotation holder is cleaned by the cleaner. Inthe rotation holder, the outer peripheral end of the substrate is heldwith the plurality of holders provided at the rotator abutting againstthe plurality of the outer peripheral end of the substrate. Further, therotator is rotated about the rotation axis. In the cleaner, the cleaningtool is moved while being pressed by the mover against the back surfaceof the substrate held by the plurality of holders of the rotationholder. The foreign matter on the back surface of the substrate isremoved by polishing with the cleaning tool. The back surface of thesubstrate, which has been cleaned or is being cleaned by the cleaningtool, is further cleaned by the cleaning brush.

Thus, foreign matter firmly adhering to the back surface of thesubstrate, the coating film that is formed when the coating liquid flowsto the back surface of the substrate, the foreign matter mixed with thecoating film and the like can be removed by polishing with the cleaningtool. Further, different types of foreign matter adhering to the backsurface of the substrate can be appropriately removed by the cleaningtool and the cleaning brush.

The cleaner may further include a cleaning liquid supplier that suppliesa cleaning liquid to the back surface of the substrate, which has beencleaned or is being cleaned by the cleaner. In this case, the foreignmatter removed from the back surface of the substrate by polishing canbe discharged to outside with a simple configuration.

One substrate processing apparatus includes a film former that forms acoating film on a surface to be processed by supplying a coating liquidto the surface to be processed of a substrate, a remover that supplies aremoval liquid for removing the coating film formed on a peripheralportion of the surface to be processed of the substrate by the filmformer to the peripheral portion of the substrate, and theabove-mentioned or another substrate cleaning device that cleans a backsurface of the substrate from which the coating film on the peripheralportion of the surface to be processed is removed by the remover.

In this substrate processing apparatus, the coating film is formed onthe surface to be processed of the substrate by supply of the coatingliquid to the surface to be processed of the substrate by the filmformer. Further, the coating film formed on the peripheral portion ofthe surface to be processed of the substrate is removed by supply of theremoval liquid to the peripheral portion of the substrate by theremover. Thus, the coating film is formed on the surface to be processedexcept for the peripheral portion of the substrate.

In the above-mentioned substrate cleaning device, the back surface ofthe substrate held and rotated by the rotation holder is cleaned by thecleaner. In the rotation holder, the outer peripheral end of thesubstrate is held with the plurality of holders provided at the rotatorabutting against the plurality of portions of the outer peripheral endof the substrate. Further, the rotator is rotated about the rotationaxis. In the cleaner, the cleaning tool is moved while being pressed bythe mover against the back surface of the substrate held by theplurality of holders of the rotation holder. Foreign matter on the backsurface of the substrate is removed by polishing with the cleaning tool.

In the one above-mentioned substrate cleaning device, the reaction forceagainst the load applied to the back surface of the substrate by thecleaning tool is generated in the substrate by the reaction forcegenerator. That is, the load applied to the back surface of thesubstrate by the cleaning tool during cleaning is resisted by thereaction force generated by the reaction force generator. Therefore,even when the cleaning tool is pressed against the back surface of thesubstrate, the substrate is prevented from bending. Thus, the cleaningtool can uniformly abut against the back surface of the substrate, and auniform load can be applied to the back surface of the substrate forsufficient cleaning. As a result, foreign matter firmly adhering to theback surface of the substrate, the coating film that is formed when thecoating liquid flows to the back surface of the substrate, foreignmatter mixed with the coating film and the like can be reliably removed.

In the other above-mentioned substrate cleaning device, foreign matteron the back surface of the substrate is removed by polishing with thecleaning tool, and then the back surface of the substrate is furthercleaned by the cleaning brush. Thus, foreign matter firmly adhering tothe back surface of the substrate, the coating film that is formed whenthe coating liquid flows to the back surface of the substrate, foreignmatter mixed with the coating film and the like can be removed bypolishing with the cleaning tool. Further, different types of foreignmatter adhering to the back surface of the substrate can beappropriately removed by the cleaning tool and the cleaning brush.

One substrate cleaning method for cleaning a back surface of a substrateincluding the steps of holding and rotating the substrate by a rotationholder, and cleaning the back surface of the substrate held by therotation holder by a cleaner, wherein the step of holding and rotatingthe substrate includes making a plurality of holders provided at arotator abut against and hold a plurality of portions of an outerperipheral end of the substrate, and rotating the rotator about arotation axis, and the step of cleaning includes moving a cleaning toolby a mover while pressing the cleaning tool against the back surface ofthe substrate held by the plurality of holders by the mover, removingforeign matter on the back surface of the substrate by polishing withthe cleaning tool, and generating a reaction force in the substrate by areaction force generator against a load applied to the back surface ofthe substrate by the cleaning tool.

In this substrate cleaning method, the back surface of the substrateheld and rotated by the rotation holder is cleaned by the cleaner. Inthe rotation holder, the outer peripheral end of the substrate is heldwith the plurality of holders provided at the rotator abutting againstthe plurality of portions of the outer peripheral end of the substrate.Further, the rotator is rotated about the rotation axis. In the cleaner,the cleaning tool is moved while being pressed by the mover against theback surface of the substrate held by the plurality of holders of therotation holder. The reaction force against the load applied to the backsurface of the substrate by the cleaning tool is generated in thesubstrate by the reaction force generator. Foreign matter on the backsurface of the substrate is removed by polishing with the cleaning tool.

In this method, the load applied to the back surface of the substrate bythe cleaning tool during cleaning is resisted by the reaction forcegenerated by the reaction force generator. Therefore, even when thecleaning tool is pressed against the back surface of the substrate, thesubstrate is prevented from bending. Thus, the cleaning tool canuniformly abut against the back surface of the substrate, and a uniformload can be applied to the back surface of the substrate for sufficientcleaning. As a result, foreign matter firmly adhering to the backsurface of the substrate, the coating film that is formed when thecoating liquid flows to the back surface of the substrate, foreignmatter mixed with the coating film and the like can be reliably removed.

Another substrate cleaning method for cleaning a back surface of asubstrate, including the steps of holding and rotating the substrate bya rotation holder and cleaning the back surface of the substrate held bythe rotation holder by a cleaner, wherein the step of holding androtating the substrate includes making a plurality of holders providedat a rotator abut against and hold a plurality of portions of an outerperipheral end of the substrate, and rotating the rotator about arotation axis, and the step of cleaning includes moving a cleaning toolby a mover while pressing the cleaning tool against the back surface ofthe substrate held by the plurality of holders by the mover, removingforeign matter on the back surface of the substrate by polishing withthe cleaning tool, and further cleaning the back surface of thesubstrate, which has been cleaned or is being cleaned by the cleaningtool, by a cleaning brush.

In this substrate cleaning method, the back surface of the substrateheld and rotated by the rotation holder is cleaned by the cleaner. Inthe rotation holder, the outer peripheral end of the substrate is heldwith the plurality of holders provided at the rotator abutting againstthe plurality of portions of the outer peripheral end of the substrate.Further, the rotator is rotated about the rotation axis. In the cleaner,the cleaning tool is moved while being pressed by the mover against theback surface of the substrate held by the plurality of holders of therotation holder. Foreign matter on the back surface of the substrate isremoved by polishing with the cleaning tool. The back surface of thesubstrate, which has been cleaned or is being cleaned by the cleaningtool, is further cleaned by the cleaning brush.

Thus, foreign matter firmly adhering to the back surface of thesubstrate, the coating film that is formed when the coating liquid flowsto the back surface of the substrate, foreign matter mixed with thecoating film and the like can be removed by the polishing with thecleaning tool. Further, different types of foreign matter adhering tothe back surface of the substrate can be appropriately removed by thecleaning tool and the cleaning brush.

One substrate processing method including the steps of forming a coatingfilm on a surface to be processed by supplying a coating liquid to thesurface to be processed of a substrate, supplying a removal liquid forremoving the coating film formed on a peripheral portion of the surfaceto be processed of the substrate to the peripheral portion of thesubstrate, and cleaning a back surface of the substrate from which thecoating film on the peripheral portion of the surface to be processed isremoved by using the above-mentioned or another substrate cleaningmethod.

In this substrate processing method, the coating film is formed on thesurface to be processed of the substrate by supply of the coating liquidto the surface to be processed of the substrate by the film former.Further, the coating film formed on the peripheral portion of thesurface to be processed of the substrate is removed by supply of theremoval liquid to the peripheral portion of the substrate by theremover. Thus, the coating film is formed on the surface to be processedexcept for the peripheral portion of the substrate.

In the above-mentioned substrate cleaning method, the back surface ofthe substrate held and rotated by the rotation holder is cleaned by thecleaner. In the rotation holder, the outer peripheral end of thesubstrate is held with the plurality of holders provided at the rotatorabutting against the plurality of portions of the outer peripheral endof the substrate. Further, the rotator is rotated about the rotationaxis. In the cleaner, the cleaning tool is moved while being pressed bythe mover against the back surface of the substrate held by theplurality of holders of the rotation holder. Foreign matter on the backsurface of the substrate is removed by polishing with the cleaning tool.

In the one above-mentioned substrate cleaning method, the reaction forceagainst the load applied to the back surface of the substrate by thecleaning tool is generated in the substrate by the reaction forcegenerator. That is, the load applied to the back surface of thesubstrate by the cleaning tool during cleaning is resisted by thereaction force generated by the reaction force generator. Therefore,even when the cleaning tool is pressed against the back surface of thesubstrate, the substrate is prevented from bending. Thus, the cleaningtool can uniformly abut against the back surface of the substrate, and auniform load can be applied to the back surface of the substrate forsufficient cleaning. As a result, foreign matter firmly adhering to theback surface of the substrate, the coating film that is formed when thecoating liquid flows to the back surface of the substrate, foreignmatter mixed with the coating film and the like can be reliably removed.

In the other above-mentioned substrate cleaning method, foreign matteron the back surface of the substrate is removed by polishing with thecleaning tool, and then the back surface of the substrate is furthercleaned by the cleaning brush. Thus, foreign matter firmly adhering tothe back surface of the substrate, the coating film that is formed whenthe coating liquid flows to the back surface of the substrate, foreignmatter mixed with the coating film and the like can be removed. Further,different types of foreign matter adhering to the back surface of thesubstrate can be appropriately removed by the cleaning tool and thecleaning brush.

Other features, elements, characteristics, and advantages of the presentinvention will become more apparent from the following description ofpreferred embodiments of the present invention with reference to theattached drawings.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING

FIG. 1 is a schematic plan view of a substrate processing apparatusaccording to a first embodiment of the present invention;

FIG. 2 is a schematic side view showing inner configurations of acoating processing section, a development processing section and acleaning drying processing section of FIG. 1;

FIG. 3 is a schematic plan view showing a configuration of a cleaningdrying processing unit of FIG. 2;

FIG. 4 is a partial cross sectional view taken along the line A-A of thecleaning drying processing unit of FIG. 3;

FIG. 5 is a partial cross sectional view taken along the line B-B of thecleaning drying processing unit of FIG. 3;

FIGS. 6A and 6B are enlarged side views of an outer peripheral end of asubstrate;

FIGS. 7A and 7B are diagrams for explaining a holding operation of thesubstrate by a spin chuck;

FIGS. 8A and 8B are diagrams for explaining the holding operation by thespin chuck;

FIG. 9 is a side view for explaining surface cleaning processing for thesubstrate;

FIGS. 10A and 10B are side views for explaining back surface cleaningprocessing for the substrate by a first cleaning mechanism;

FIG. 11 is a plan view for explaining the back surface cleaningprocessing for the substrate by the first cleaning mechanism;

FIG. 12 is a schematic side view showing inner configurations of thermalprocessing sections and the cleaning drying processing section of FIG.1;

FIG. 13 is a schematic side view showing inner configurations oftransport sections;

FIG. 14 is a side view showing a configuration of the cleaning dryingprocessing unit in a first modified example;

FIG. 15 is a side view for explaining the back surface cleaningprocessing for the substrate by a second cleaning mechanism;

FIG. 16 is a side view for explaining outer peripheral end cleaningprocessing for the substrate by the second cleaning mechanism;

FIG. 17 is a schematic plan view showing a configuration of a cleaningdrying processing unit of a second modified example;

FIGS. 18A to 18C are schematic side views showing an operation of thecleaning drying processing unit of FIG. 17 during the back surfacecleaning processing;

FIG. 19 is a partial longitudinal cross sectional view showing aconfiguration of a cleaning drying processing unit in a secondembodiment of the present invention;

FIG. 20 is an enlarged side view of a cleaning head in the cleaningdrying processing unit of FIG. 19; and

FIG. 21 is a schematic plan view of the substrate cleaning unitincluding the substrate cleaning device.

DESCRIPTION OF THE PREFERRED EMBODIMENTS [1] First Embodiment

(1) Substrate Processing Apparatus

A substrate cleaning device and the substrate processing apparatusaccording to the first embodiment of the present invention will bedescribed below with reference to drawings. In the followingdescription, a substrate refers to a semiconductor substrate, asubstrate for a liquid crystal display device, a substrate for a plasmadisplay, a substrate for an optical disc, a substrate for a magneticdisc, a substrate for a magneto-optical disc, a substrate for aphotomask or the like. Further, the substrate used in the presentembodiment has an at least partially circular outer peripheral end. Forexample, the outer peripheral end except for a notch for positioning iscircular.

FIG. 1 is a schematic plan view of the substrate processing apparatusaccording to the first embodiment of the present invention. FIG. 1 andthe subsequent drawings are accompanied by arrows that indicate X, Y,and Z directions orthogonal to one another for the clarity of apositional relationship. The X and Y directions are orthogonal to eachother within a horizontal plane, and the Z direction corresponds to avertical direction.

As shown in FIG. 1, the substrate processing apparatus 100 includes anindexer block 11, a coating block 12, a development block 13, a cleaningdrying processing block 14A and a carry-in carry-out block 14B. Aninterface block 14 is constituted by the cleaning drying processingblock 14A and the carry-in carry-out block 14B. An exposure device (anexposer) 15 is arranged to be adjacent to the carry-in carry-out block14B.

The indexer block 11 includes a plurality of carrier platforms 111 and atransport section (a transport space) 112. In each carrier platform 111,a carrier 113 for storing the plurality of substrates W in multiplestages is placed. In the transport section 112, a main controller 114and a transport mechanism (a transport robot) 115 are provided. The maincontroller 114 controls various constituent elements of the substrateprocessing apparatus 100. The transport mechanism 115 holds andtransports the substrate W.

The coating block 12 includes a coating processing section (a coatingprocessing space) 121, a transport section (a transport space) 122 and athermal processing section (a thermal processing space) 123. The coatingprocessing section 121 and the thermal processing section 123 areopposite to each other with the transport section 122 sandwichedtherebetween. Substrate platforms PASS1 to PASS4 (see FIG. 13) on whichthe substrates W are placed are provided between the transport section122 and the indexer block 11. Transport mechanisms (transport robots)127, 128 (see FIG. 13), which transport the substrates W, are providedin the transport section 122.

The development block 13 includes a development processing section (adevelopment processing space) 131, a transport section (a transportspace) 132 and a thermal processing section (a thermal processing space)133. The development processing section 131 and the thermal processingsection 133 are opposite to each other with the transport section 132sandwiched therebetween. Substrate platforms PASS5 to PASS8 (see FIG.13) on which the substrates W are placed are provided between thetransport section 132 and the transport section 122. Transportmechanisms (transport robots) 137, 138 (see FIG. 13), which transportthe substrates W, are provided in the transport section 132.

The cleaning drying processing block 14A includes cleaning dryingprocessing sections (cleaning drying processing spaces) 161, 162 and atransport section (a transport space) 163. The cleaning dryingprocessing sections 161, 162 are opposite to each other with thetransport section 163 sandwiched therebetween. Transport mechanisms(transport robots) 141, 142 are provided in the transport section 163.

Placement buffer units P-BF1, P-BF2 (see FIG. 13) are provided betweenthe transport section 163 and the transport section 132. The placementbuffer units P-BF1, P-BF2 are configured to be capable of storing theplurality of substrates W.

Further, a substrate platform PASS9, and placement cooling units P-CP(see FIG. 13) that are described below are provided to be adjacent tothe carry-in carry-out block 14B between the transport mechanisms 141,142. Each placement cooling unit P-CP includes a function of cooling thesubstrate W (a cooling plate, for example). In the placement coolingunit P-CP, the substrate W is cooled to a temperature suitable forexposure processing. A transport mechanism (a transport robot) 143 isprovided in the carry-in carry-out block 14B. The transport mechanism143 carries in the substrate W to and carries out the substrate W fromthe exposure device 15.

(2) Coating Processing Section and Development Processing Section

FIG. 2 is a schematic side view showing an inner configuration of thecoating processing section 121, the development processing section 131and the cleaning drying processing section 161 of FIG. 1. As shown inFIG. 2, in the coating processing section 121, coating processingchambers 21, 22, 23, 24 are provided in a stack. In each of the coatingprocessing chambers 21 to 24, a coating processing unit (a coater) 129is provided. In the development processing section 131, developmentprocessing chambers 31, 32, 33, 34 are provided in a stack. In each ofthe development processing chambers 31 to 34, a development processingunit (a developer) 139 is provided.

As shown in FIGS. 1 and 2, each coating processing unit 129 includes aplurality of spin chucks 25, a plurality of cups 27, a plurality ofprocessing liquid nozzles 28, a nozzle transport mechanism (a nozzletransport robot) 29 and a plurality of edge rinse nozzles 30. In thepresent embodiment, two spin chucks 25, two cups 27, two edge rinsenozzles 30 are provided in each coating processing unit 129.

Each spin chuck 25 is driven to be rotated by a driving device (notshown) (an electrical motor, for example) while holding the substrate W.Each cup 27 is provided to surround the spin chuck 25.

Various types of processing liquids, described below, are supplied toeach processing liquid nozzle 28 from a processing liquid storage (notshown) through a processing liquid pipe. During the wait during whichthe processing liquid is not supplied to the substrate W, eachprocessing liquid nozzle 28 is arranged at a waiting position. Duringthe supply of the processing liquid to the substrate W, any processingliquid nozzle 28 arranged at the waiting position is held by the nozzletransport mechanism 29 and transported to a position directly upward ofthe substrate W.

The processing liquid is discharged from the processing liquid nozzle 28while the spin chuck 25 is rotated, whereby the processing liquid isapplied to an upper surface of the rotating substrate W. Further, arinse liquid is discharged towards a peripheral portion of the rotatingsubstrate W from the edge rinse nozzle 30 while the spin chuck 25 isrotated, whereby a peripheral portion of the processing liquid appliedto the substrate W is dissolved. Thus, the processing liquid on theperipheral portion of the substrate W is removed. The peripheral portionof the substrate W here refers to a region having a constant widthextending along an outer peripheral end of the substrate W on thesurface of the substrate W.

In the present embodiment, in the coating processing unit 129 in each ofthe coating processing chambers 22, 24 of FIG. 2, a processing liquidfor an anti-reflection film (an anti-reflection liquid) is supplied tothe substrate W from the processing liquid nozzle 28. In the coatingprocessing unit 129 in each of the coating processing chambers 21, 23, aprocessing liquid for a resist film (a resist liquid) is supplied to thesubstrate W from the processing liquid nozzle 28.

As shown in FIG. 2, the development processing unit 139 includes aplurality of spin chucks 35 and a plurality of cups 37 similarly to thecoating processing unit 129. Further, as shown in FIG. 1, thedevelopment processing unit 139 includes two slit nozzles 38 thatdischarge a development liquid and a moving mechanism (a moving robot)39 that moves these slit nozzles 38 in the X direction.

In the development processing unit 139, each spin chuck 35 is rotated bya driving device (not shown). Thus, the substrate W is rotated. Eachslit nozzle 38 supplies the development liquid to each rotatingsubstrate W while moving. Thus, development processing for the substrateW is performed.

A plurality (four in the present example) of cleaning drying processingunits (cleaning drying processors) SD1 are provided in the cleaningdrying processing section 161. In each cleaning drying processing unitSD1, cleaning and drying processing for the substrate W before theexposure processing are performed. The configuration of the cleaningdrying processing unit SD1 will be described below.

(3) Configuration of Cleaning Drying Processing Units

FIG. 3 is a schematic plan view showing the configuration of thecleaning drying processing unit SD1 of FIG. 2. FIG. 4 is a partial crosssectional view taken along the line A-A of the cleaning dryingprocessing unit SD1 of FIG. 3. FIG. 5 is a partial cross sectional viewtaken along the line B-B of the cleaning drying processing unit SD1 ofFIG. 3. FIGS. 6A and 6B are enlarged side views of the outer peripheralend of the substrate W. As shown in FIG. 6A, the outer peripheral end 10of the substrate W includes a bevel portion 1 closer to a surface to beprocessed, a bevel portion 2 closer to a back surface and an end surface3. A resist film R is formed as a coating film in a region except for aperipheral portion PE on the surface to be processed of the substrate W.

As shown in FIGS. 3 to 5, the cleaning drying processing unit SD1includes a rotation holding unit (a rotation holder) 200 and a cleaningunit (a cleaner) 300. The rotation holding unit 200 includes a spinchuck 210, a plurality of chuck pins 220, a switcher 230, a guardmechanism 240 and a plurality of receiving transferring mechanisms 250.The spin chuck 210 is configured to horizontally hold and rotate thesubstrate W and includes a spin motor 211, a rotation shaft 212, a spinplate 213 and a plate support member (a plate supporter) 214.

The spin motor 211 is provided in an upper portion of the cleaningdrying processing unit SD1 and supported by a support member (notshown). The rotation shaft 212 is provided to extend downward from thespin motor 211. The plate support member 214 is attached to the lowerend of the rotation shaft 212. The spin plate 213 is disc-shaped andhorizontally supported by the plate support member 214. The spin plate213 is rotated about a vertical axis by rotation of the rotation shaft212 by the spin motor 211.

A liquid supply pipe 215 is inserted into the spin motor 211, therotation shaft 212 and the plate support member 214. A cleaning liquidcan be supplied to an upper surface of the substrate W held by the spinchuck 210 through the liquid supply pipe 215. As the cleaning liquid,pure water is used, for example.

The plurality of chuck pins 220 are provided at the peripheral portionof the spin plate 213 at equal angular intervals about the rotationshaft 212. In the present example, eight chuck pins 220 are provided atthe peripheral portion of the spin plate 213 at intervals of 45 degreeswith respect to the rotation shaft 212. Each chuck pin 220 includes ashaft 221, a pin supporter 222, a holder 223 and a magnet 224.

The shaft 221 is provided to penetrate the spin plate 213 in a verticaldirection. The pin supporter 222 is provided to extend in a horizontaldirection from the lower end of the shaft 221. The holder 223 isprovided to project downward from the tip end of the pin supporter 222.Further, the magnet 224 is attached to the upper end of the shaft 221 onthe upper surface side of the spin plate 213.

Each chuck pin 220 is rotatable about the shaft 221 and switchablebetween a closed state where the holder 223 abuts against the outerperipheral end 10 of the substrate W and an open state where the holder223 is spaced apart from the outer peripheral end 10 of the substrate W.In the present example, each chuck pin 220 is in the closed state in thecase where an N pole of the magnet 224 is on an inner side, and eachchuck pin 220 is in the open state in the case where an S pole of themagnet 224 is on the inner side. Further, in the closed state, eachholder 223 abuts against the bevel portions 1, 2 of the substrate W.

The switcher 230 includes magnet plates 231, 232 and magnet liftinglowering mechanisms (magnet movers) 233, 234. The magnet plates 231, 232are arranged above the spin plate 213 in a circumferential directionabout the rotation shaft 212. The magnet plates 231, 232 have S poles onthe outer side and N poles on the inner side. The magnet liftinglowering mechanisms 233, 234 respectively lift and lower the magnetplates 231, 232. Thus, each of the magnet plates 231, 232 isindependently movable between an upper position higher than the magnet224 of the chuck pin 220 and a lower position substantially the sameheight as that of the magnet 224 of the chuck pin 220.

Each chuck pin 220 is switched between the open state and the closedstate by lifting and lowering of the magnet plates 231, 232. Details ofoperations of the magnet plates 231, 232 and the chuck pins 220 will bedescribed below.

The guard mechanism 240 includes a guard 241 and a guard liftinglowering mechanism (a guard mover) 242. The guard 241 is rotationallysymmetric about the rotation shaft 212 of the spin chuck 210 andprovided outside of the spin chuck 210. The guard lifting loweringmechanism 242 lifts and lowers the guard 241. The guard 241 receives acleaning liquid splashed from the substrate W. The cleaning liquidreceived by the guard 241 is discharged or recovered by a liquiddischarge device or a recovery device (not shown).

The plurality (three in the present example) of receiving transferringmechanisms 250 are arranged outside of the guard 241 at equal angularintervals about the rotation shaft 212 of the spin chuck 210. Eachreceiving transferring mechanism 250 includes a lifting loweringrotation driver 251, a rotation shaft 252, an arm 253 and a holding pin254.

The rotation shaft 252 is provided to extend upward from the liftinglowering rotation driver 251. The arm 253 is provided to extend in thehorizontal direction from the upper end of the rotation shaft 252. Theholding pin 254 is provided at a tip end of the arm 253 to be capable ofholding the outer peripheral end 10 of the substrate W. The rotationshaft 252 performs a lifting lowering operation and a rotating operationby the lifting lowering rotation driver 251. Thus, the holding pin 254is moved in the horizontal and upward-and-downward directions.

The cleaning unit 300 includes a first cleaning mechanism (a firstcleaner) 310 and a plurality of auxiliary pins 330. In the presentembodiment, the first cleaning mechanism 310 is arranged in a lowerportion of the cleaning drying processing unit SD1 to be capable ofcleaning the back surface of the substrate W held by the spin chuck 210of the rotation holding unit 200. The first cleaning mechanism 310includes a cleaning head 311, a head holding member (a head holder) 312,a cleaning nozzle 313 and a head moving mechanism (a head mover) 314.

The cleaning head 311 is substantially columnar and formed of a PVA(polyvinyl alcohol) sponge in which abrasive grains are dispersed, forexample. The cleaning head 311 has a polishing surface 311 a forpolishing the back surface of the substrate W, and is held by the headholding member 312 such that the polishing surface 311 a is directedupward. Further, the cleaning nozzle 313 is attached to a portion of thehead holding member 312 in the vicinity of the cleaning head 311. Aliquid supply pipe (not shown) from which a cleaning liquid is suppliedis connected to the cleaning nozzle 313. The cleaning liquid is purewater, for example. A discharge port of the cleaning nozzle 313 isdirected towards surroundings of the polishing surface 311 a of thecleaning head 311.

The head moving mechanism 314 moves the head holding member 312 whileapplying a load P1 (FIG. 6B) to the back surface of the substrate W bythe polishing surface 311 a of the cleaning head 311. Thus, the cleaninghead 311 is moved in the horizontal and vertical directions. Thecleaning head 311 cleans by polishing the back surface of the substrateW held by the spin chuck 210. After the cleaning of the substrate W, thecleaning liquid is discharged towards surroundings of the upper end ofthe cleaning head 311 from the discharge port of the cleaning nozzle313, so that particles are removed.

The plurality of auxiliary pins 330 are provided at a peripheral portionof the spin plate 213 at equal angular intervals about the rotationshaft 212 of the rotation holding unit 200. In the present example,eight auxiliary pins 330 are arranged at the peripheral portion of thespin plate 213 at intervals of 45 degrees about the rotation shaft 212.Each auxiliary pin 330 is arranged at a halfway position between theadjacent two chuck pins 220 to penetrate the spin plate 213 in thevertical direction. With each chuck pin 220 in the closed state and eachholder 223 abutting against the bevel portions 1, 2 of the substrate W(FIG. 6A), a lower portion of each auxiliary pin 330 abuts against thebevel portion 1 of the substrate W.

Specifically, as shown in FIG. 6B, the auxiliary pin 330 includes anouter peripheral surface 331, a lower surface 332 and an inclinedsurface 333. The outer peripheral surface 331 is columnar, and the lowersurface 332 is horizontal. The inclined surface 333 is formed in atapered shape to connect the outer peripheral surface 331 and the lowersurface 332 to each other. That is, the lower portion of the auxiliarypin 330 has a truncated cone-shape. The inclined surface 333 of theauxiliary pin 330 abuts against the bevel portion 1 of the substrate W.The auxiliary pin 330 generates a reaction force P2 in the substrate Wagainst the load P1 applied to the back surface of the substrate W bythe polishing surface 311 a of the cleaning head 311.

While the auxiliary pin 330 abuts against the bevel portion 1 of thesubstrate W with the lower surface 332 not projecting downward of thesubstrate W in the present embodiment, the present invention is notlimited to this. The auxiliary pin 330 may abut against the bevelportion 1 of the substrate W with the lower surface 332 projectingdownward of the substrate W. In this case, an angle formed by theinclined surface 333 of the auxiliary pin 330 with a horizontal plane ispreferably smaller than 45 degrees, for example. In this configuration,because the lower surface 332 of the auxiliary pin 330 is sufficientlyspaced apart from the outer peripheral end 10 of the substrate W, thepolishing surface 311 a of the cleaning head 311 is unlikely to comeinto contact with the lower surface 332 of the auxiliary pin 330.

(4) Operation of Cleaning Drying Processing Units

FIGS. 7A to 8B are diagrams for explaining a holding operation of thesubstrate W by the spin chuck 210. First, as shown in FIG. 7A, the guard241 is moved to a position lower than the chuck pins 220. Then, theholding pins 254 of the plurality of receiving transferring mechanisms250 (FIG. 3) are moved to positions below the spin plate 213 through aspace above the guard 241. The substrate W is placed on the plurality ofholding pins 254 by the transport mechanism 141 (FIG. 1).

At this time, the magnet plates 231, 232 are at the upper positions. Inthis case, lines of the magnetic force B of the magnet plates 231, 232are directed outward at the height of the magnet 224 of the chuck pin220. Thus, the S pole of the magnet 224 of each chuck pin 220 isattracted inward. Therefore, each chuck pin 220 enters the open state.

Next, as shown in FIG. 7B, the plurality of holding pins 254 are liftedwhile holding the substrate W. Thus, the substrate W is moved to aposition surrounded by the holders 223 of the plurality of chuck pins220. Further, the bevel portion 1 of the substrate W (FIG. 6A) abutsagainst the inclined surfaces 333 of the plurality of auxiliary pins 330(FIG. 6B).

Subsequently, as shown in FIG. 8A, the magnet plates 231, 232 are movedto the lower positions. In this case, the N pole of the magnet 224 ofeach chuck pin 220 is attracted inward, and each chuck pin 220 entersthe closed state. Thus, with the bevel portion 1 of the substrate Wabutting against the inclined surfaces 333 of the plurality of auxiliarypins 330, the bevel portions 1, 2 of the substrate W are held by theholder 223 of each chuck pin 220. Each chuck pin 220 holds the bevelportions 1, 2 of the substrate W between the adjacent holding pins 254.Therefore, the chuck pins 220 and the holding pins 254 do not interferewith each other. Thereafter, the plurality of holding pins 254 are movedto positions outside of the guard 241.

Thereafter, as shown in FIG. 8B, the guard 241 is moved to a height atwhich the guard 241 surrounds the substrate W held by the chuck pins220. Then, cleaning processing and drying processing for the substrate Ware sequentially performed. The cleaning processing includes surfacecleaning processing for cleaning a surface (an upper surface) of thesubstrate W and back surface cleaning processing for cleaning the backsurface (a lower surface) of the substrate W. Either of the surfacecleaning processing and the back surface cleaning processing may beperformed first, or the surface cleaning processing and the back surfacecleaning processing may be performed simultaneously.

FIG. 9 is a side view for explaining the surface cleaning processing forthe substrate W. As shown in FIG. 9, during the surface cleaningprocessing for the substrate W, with the substrate W rotated by the spinchuck 210, the cleaning liquid is supplied to the surface of thesubstrate W through the liquid supply pipe 215. The cleaning liquidspreads to the entire surface of the substrate W by a centrifugal forceand is splashed outward. Thus, particles and the like adhering to thesurface of the substrate W are cleaned away.

FIGS. 10A and 10B are side views for explaining the back surfacecleaning processing for the substrate W by the first cleaning mechanism310. FIG. 11 is a plan view for explaining the back surface cleaningprocessing for the substrate W by the first cleaning mechanism 310. Inthe back surface cleaning processing for the substrate W, the backsurface cleaning processing for the center portion of the substrate Wand the back surface cleaning processing for the peripheral portion ofthe substrate W are sequentially performed. The peripheral portion ofthe back surface of the substrate W here means a region that extendsinward by a predetermined width from the bevel portion 2 of thesubstrate W (FIG. 6A), and its width is smaller than a diameter of thepolishing surface 311 a of the cleaning head 311 (FIG. 6B). Either ofthe back surface cleaning processing for the center portion and the backsurface cleaning processing for the peripheral portion of the substrateW may be performed first.

As shown in FIG. 10A, during the back surface cleaning processing forthe center portion of the substrate W, with the substrate W rotated bythe spin chuck 210, the cleaning head 311 is moved to a positiondirectly downward of the center portion of the substrate W. Then, withthe load P1 applied to the back surface of the substrate W by thepolishing surface 311 a of the cleaning head 311, the cleaning head 311is moved in the center portion of the substrate W. Thus, the centerportion of the back surface of the substrate W is polished by thecleaning head 311, and foreign matter adhering to the back surface ofthe substrate W is removed. Further, the cleaning liquid is supplied toa contact portion between the back surface of the substrate W and thepolishing surface 311 a of the cleaning head 311 from the cleaningnozzle 313, so that particles are removed.

As shown in FIG. 10B, during the back surface cleaning processing forthe peripheral portion of the substrate W, the magnet plate 231 isarranged at the lower position, and the magnet plate 232 is arranged atthe upper position. In this state, the substrate W is rotated by thespin chuck 210.

In this case, as shown in FIG. 11, each chuck pin 220 is in the closedstate in an outer region R1 of the magnet plate 231, and each chuck pin220 is in the open state in an outer region R2 of the magnet plate 232.That is, the holder 223 of each chuck pin 220 is kept in contact withthe outer peripheral end 10 of the substrate W in passing through theouter region R1 of the magnet plate 231 and spaced part from the outerperipheral end 10 of the substrate W in passing through the outer regionR2 of the magnet plate 232.

In the present example, at least seven chuck pins 220 among the eightchuck pins 220 are positioned in the outer region R1 of the magnet plate231. In this case, the substrate W is held by at least the seven chuckpins 220. Thus, stability of the substrate W is ensured. Further, evenin the case where the magnet plate 232 is arranged at the upperposition, the inclined surfaces 333 of the eight auxiliary pins 330(FIG. 6B) abut against the bevel portion 1 of the substrate W fromabove.

In this state, the cleaning head 311 is moved to the peripheral portionof the back surface of the substrate W in the outer region R2. Then, theload P1 is applied to the peripheral portion of the back surface of thesubstrate W by the polishing surface 311 a of the cleaning head 311.Thus, the peripheral portion of the back surface of the substrate W ispolished by the cleaning head 311, and foreign matter adhering to theback surface of the substrate W is removed. Further, the cleaning liquidis supplied to a contact portion between the back surface of thesubstrate W and the polishing surface 311 a of the cleaning head 311from the cleaning nozzle 313, so that particles are removed.

In this manner, during the back surface cleaning processing for theperipheral portion, the holder 223 of each chuck pin 220 is spaced apartfrom the outer peripheral end 10 of the substrate W in passing throughthe outer region R1 of the magnet plate 231. Thus, the cleaning head 311can efficiently and sufficiently clean the peripheral portion of theback surface of the substrate W without interfering with the chuck pin220.

In the outer region R1, when any chuck pin 220 is spaced apart from theouter peripheral end 10 of the substrate W, the outer peripheral end 10of the substrate W in the vicinity of the chuck pin 220 is not held bythe chuck pin 220. Even in this state, two auxiliary pins 330 adjacentto the chuck pin 220 abut against portions of the bevel portion 1 of thesubstrate W and generate the reaction force P2 against the load P1 inthe substrate W. Therefore, bending of the substrate Win the case wherethe load P1 is applied by the cleaning head 311 is prevented. Thus, theentire back surface of the substrate W can be sufficiently cleaned whilethe load P1 applied to the center portion and the peripheral portion ofthe back surface of the substrate W is uniformly maintained.

After the above-mentioned surface cleaning processing and the backsurface cleaning processing, the drying processing for the substrate Wis performed. In this case, the magnet plates 231, 232 are arranged atthe lower positions, and the substrate W is held by all of the chuckpins 220. In this state, the substrate W is rotated at a high speed bythe spin chuck 210. Thus, the cleaning liquid adhering to the substrateW is shaken off, and the substrate W is dried.

During the drying processing for the substrate W, gas such as an inertgas (a nitrogen gas, for example) or air may be supplied to thesubstrate W through the liquid supply pipe 215. In this case, thecleaning liquid on the substrate W is blown off outward by an air flowformed between the spin plate 213 and the substrate W. Thus, thesubstrate W can be efficiently dried.

(5) Thermal Processing Section

FIG. 12 is a schematic side view showing the inner configurations of thethermal processing sections 123, 133 and the cleaning drying processingsection 162 of FIG. 1. As shown in FIG. 12, the thermal processingsection 123 has an upper thermal processing section (an upper thermalprocessing space) 101 provided above, and a lower thermal processingsection (a lower thermal processing space) 102 provided below. Aplurality of thermal processing units (thermal processors) PHP, aplurality of adhesion reinforcement processing units (adhesionreinforcement processors) PAHP and a plurality of cooling units (coolingplates) CP are provided in the upper thermal processing section 101 andthe lower thermal processing section 102.

A local controller LC1 is provided at the top of the thermal processingsection 123. The local controller LC1 controls the operations of thecoating processing section 121, the transport section 122 and thethermal processing section 123 based on the instruction from the maincontroller 114 of FIG. 1.

In each thermal processing unit PHP, heating processing and coolingprocessing for the substrate W are performed. In each adhesionreinforcement processing unit PAHP, adhesion reinforcement processingfor improving the adhesion between the substrate W and theanti-reflection film is performed. Specifically, in the adhesionreinforcement processing unit PAHP, an adhesion reinforcement agent suchas HMDS (hexamethyldisilazane) is applied to the substrate W, and theheating processing is performed on the substrate W. In the cooling unitCP, the cooling processing for the substrate W is performed.

The thermal processing section 133 has an upper thermal processingsection (an upper thermal processing space) 103 provided above and alower thermal processing section (a lower thermal processing space) 104provided below. A cooling unit CP, a plurality of thermal processingunits PHP and an edge exposure unit (an edge exposer) EEW are providedin each of the upper thermal processing section 103 and the lowerthermal processing section 104. The thermal processing units PHP in theupper thermal processing section 103 and the lower thermal processingsection 104 are configured such that the substrates W can be carried infrom the cleaning drying processing block 14A.

A local controller LC2 is provided at the top of the thermal processingsection 133. The local controller LC2 controls the operations of thedevelopment processing section 131, the transport section 132 and thethermal processing section 133 based on the instruction from the maincontroller 114 of FIG. 1.

In the edge exposure unit EEW, exposure processing for the peripheralportion of the substrate W (edge exposure processing) is performed.Thus, the resist film on the peripheral portion of the substrate W isremoved during the subsequent development processing. As a result, afterthe development processing, in the case where the peripheral portion ofthe substrate W comes into contact with another member, generation ofparticles caused by stripping of the resist film on the peripheralportion of the substrate W is prevented.

A plurality (five in this example) of cleaning drying processing units(cleaning drying processors) SD2 are provided in the cleaning dryingprocessing section 162. The cleaning drying processing unit SD2 has theconfiguration similar to that of the cleaning drying processing unit SD1except for not having the first cleaning mechanism 310 and having asecond cleaning mechanism (a second cleaner) 320 in a first modifiedexample (FIG. 14), described below. In the cleaning drying processingunit SD2, cleaning and drying processing for the substrate W after theexposure processing are performed.

(6) Transport Sections

FIG. 13 is a schematic side view showing the inner configurations of thetransport sections 122, 132, 163. As shown in FIG. 13, the transportsection 122 has an upper transport chamber 125 and a lower transportchamber 126. The transport section 132 has an upper transport chamber135 and a lower transport chamber 136. The upper transport chamber 125is provided with a transport mechanism (a transport robot) 127, and thelower transport chamber 126 is provided with a transport mechanism (atransport robot) 128. Further, the upper transport chamber 135 isprovided with a transport mechanism (a transport robot) 137, and thelower transport chamber 136 is provided with a transport mechanism (atransport robot) 138.

The upper thermal processing section 101 (FIG. 12) is opposite to thecoating processing chambers 21, 22 (FIG. 2) with the upper transportchamber 125 sandwiched therebetween. The lower thermal processingsection 102 (FIG. 12) is opposite to the coating processing chambers 23,24 (FIG. 2) with the lower transport chamber 126 sandwichedtherebetween. The upper thermal processing section 103 (FIG. 12) isopposite to the development processing chambers 31, 32 (FIG. 2) with theupper transport chamber 135 sandwiched therebetween. The lower thermalprocessing section 104 (FIG. 12) is opposite to the developmentprocessing chambers 33, 34 (FIG. 2) with the lower transport chamber 136sandwiched therebetween.

The substrate platforms PASS1, PASS2 are provided between the transportsection 112 and the upper transport chamber 125, and the substrateplatforms PASS3, PASS4 are provided between the transport section 112and the lower transport chamber 126. The substrate platforms PASS5,PASS6 are provided between the upper transport chamber 125 and the uppertransport chamber 135, and the substrate platforms PASS7, PASS8 areprovided between the lower transport chamber 126 and the lower transportchamber 136.

The placement buffer unit P-BF1 is provided between the upper transportchamber 135 and the transport section 163, and the placement buffer unitP-BF2 is provided between the lower transport chamber 136 and thetransport section 163. The substrate platform PASS9 and the plurality ofplacement cooling units P-CP are provided in the transport section 163to be adjacent to the carry-in carry-out block 14B.

The placement buffer unit P-BF1 is configured such that the substrates Wcan be carried in and out by the transport mechanism 137 and thetransport mechanisms 141, 142 (FIG. 1). The placement buffer unit P-BF2is configured such that the substrates W can be carried in and out bythe transport mechanism 138 and the transport mechanisms 141, 142 (FIG.1). Further, the substrate platform PASS9 and the placement coolingunits P-CP are configured such that the substrates W can be carried inand out by the transport mechanisms 141, 142 (FIG. 1) and the transportmechanism 143.

The substrates W transported from the indexer block 11 to the coatingblock 12 are placed on the substrate platform PASS1 and the substrateplatform PASS3. The substrates W transported from the coating block 12to the indexer block 11 are placed on the substrate platform PASS2 andthe substrate platform PASS4.

The substrates W transported from the coating block 12 to thedevelopment block 13 are placed on the substrate platform PASS5 and thesubstrate platform PASS7. The substrates W transported from thedevelopment block 13 to the coating block 12 are placed on the substrateplatform PASS6 and the substrate platform PASS8.

The substrates W transported from the development block 13 to thecleaning drying processing block 14A are placed on the placement bufferunits P-BF1, P-BF2. The substrates W transported from the cleaningdrying processing block 14A to the carry-in carry-out block 14B areplaced on the placement cooling units P-CP. The substrate W transportedfrom the carry-in carry-out block 14B to the cleaning drying processingblock 14A is placed on the substrate platform PASS9.

The transport mechanism 127 receives the substrates W from and transfersthe substrates W to the coating processing chambers 21, 22 (FIG. 2), thesubstrate platforms PASS1, PASS2, PASS5, PASS6 (FIG. 13) and the upperthermal processing section 101 (FIG. 12). The transport mechanism 128receives the substrates W from and transfers the substrates W to thecoating processing chambers 23, 24 (FIG. 2), the substrate platformsPASS3, PASS4, PASS7, PASS8 (FIG. 13) and the lower thermal processingsection 102 (FIG. 12).

The transport mechanism 137 receives the substrates W from and transfersthe substrates W to the development processing chambers 31, 32 (FIG. 2),the substrate platforms PASS5, PASS6 (FIG. 13), the platform buffer unitP-BF1 (FIG. 13) and the upper thermal processing section 103 (FIG. 12).The transport mechanism 138 receives the substrates W from and transfersthe substrates W to the development processing chambers 33, 34 (FIG. 2),the substrate platforms PASS7, PASS8 (FIG. 13), the placement bufferunit P-BF2 (FIG. 13) and the lower thermal processing section 104 (FIG.12).

(7) Substrate Processing

The substrate processing will be described with reference to FIGS. 1, 2,12 and 13. Each carrier 113 in which unprocessed substrates W are stored(FIG. 1) is placed on each carrier platform 111 (FIG. 1) in the indexerblock 11. The transport mechanism 115 (FIG. 1) transports theunprocessed substrate W from the carrier 113 to each of the substrateplatforms PASS1, PASS3 (FIG. 13). Further, the transport mechanism 115transports the processed substrate W that is placed on each of thesubstrate platforms PASS2, PASS4 (FIG. 13) to the carrier 113.

In the coating block 12, the transport mechanism 127 (FIG. 13)sequentially transports the unprocessed substrate W that is placed onthe substrate platform PASS1 to the adhesion reinforcement processingunit PAHP (FIG. 12), the cooling unit CP (FIG. 12) and the coatingprocessing chamber 22 (FIG. 2). Next, the transport mechanism 127sequentially transports the substrate W in the coating processingchamber 22 to the thermal processing unit PHP (FIG. 12), the coolingunit CP (FIG. 12), the coating processing chamber 21 (FIG. 2), thethermal processing unit PHP (FIG. 12) and the substrate platform PASS5(FIG. 13).

In this case, the adhesion reinforcement processing is performed on thesubstrate W in the adhesion reinforcement processing unit PAHP, and thenthe substrate W is cooled in the cooling unit CP to a temperaturesuitable for the formation of the anti-reflection film. Next, theanti-reflection film is formed on the substrate W by the coatingprocessing unit 129 (FIG. 2) in the coating processing chamber 22.Subsequently, the thermal processing for the substrate W is performed inthe thermal processing unit PHP, and then the substrate W is cooled inthe cooling unit CP to a temperature suitable for the formation of theresist film. Then, the resist film is formed on the substrate W by thecoating processing unit 129 (FIG. 2) in the coating processing chamber21. Thereafter, the thermal processing for the substrate W is performedin the thermal processing unit PHP, and the substrate W is placed on thesubstrate platform PASS5.

Further, the transport mechanism 127 transports the substrate W afterthe development processing that is placed on the substrate platformPASS6 (FIG. 13) to the substrate platform PASS2 (FIG. 13).

The transport mechanism 128 (FIG. 13) sequentially transports theunprocessed substrate W that is placed on the substrate platform PASS3to the adhesion reinforcement processing unit PAHP (FIG. 12), thecooling unit CP (FIG. 12) and the coating processing chamber 24 (FIG.2). Next, the transport mechanism 128 sequentially transports thesubstrate W in the coating processing chamber 24 to the thermalprocessing unit PHP (FIG. 12), the cooling unit CP (FIG. 12), thecoating processing chamber 23 (FIG. 2), the thermal processing unit PHP(FIG. 12) and the substrate platform PASS7 (FIG. 13).

Further, the transport mechanism 128 transports the substrate W afterthe development processing that is placed on the substrate platformPASS8 (FIG. 13) to the substrate platform PASS4 (FIG. 13). The contentsof processing for the substrate Win the coating processing chambers 23,24 (FIG. 2) and the lower thermal processing section 102 (FIG. 12) arerespectively similar to the contents of processing for the substrate Winthe above-mentioned coating processing chambers 21, 22 (FIG. 2) and theupper thermal processing section 101 (FIG. 12).

In the development block 13, the transport mechanism 137 (FIG. 13)sequentially transports the substrate W after the formation of theresist film that is placed on the substrate platform PASS5 to the edgeexposure unit EEW (FIG. 12) and the placement buffer unit P-BF1 (FIG.13). In this case, in the edge exposure unit EEW, the edge exposureprocessing is performed on the substrate W. The substrate W after theedge exposure processing is placed on the placement buffer unit P-BF1.

Further, the transport mechanism 137 takes out the substrate W after theexposure processing and the thermal processing from the thermalprocessing unit PHP (FIG. 12) adjacent to the cleaning drying processingblock 14A. The transport mechanism 137 sequentially transports thesubstrate W to the cooling unit CP (FIG. 12), one of the developmentprocessing chambers 31, 32 (FIG. 2), the thermal processing unit PHP(FIG. 12) and the substrate platform PASS6 (FIG. 13).

In this case, the substrate W is cooled in the cooling unit CP to atemperature suitable for the development processing, and then thedevelopment processing for the substrate W is performed by thedevelopment processing unit 139 in any one of the development processingchambers 31, 32. Thereafter, the thermal processing for the substrate Wis performed in the thermal processing unit PHP, and the substrate W isplaced on the substrate platform PASS6.

The transport mechanism 138 (FIG. 13) sequentially transports thesubstrate W after the formation of the resist film that is placed on thesubstrate platform PASS7 to the edge exposure unit EEW (FIG. 12) and theplacement buffer unit P-BF2 (FIG. 13).

Further, the transport mechanism 138 takes out the substrate W after theexposure processing and the thermal processing from the thermalprocessing unit PHP (FIG. 12) adjacent to the interface block 14. Thetransport mechanism 138 sequentially transports the substrate W to thecooling unit CP (FIG. 12), any one of the development processingchambers 33, 34 (FIG. 2), the thermal processing unit PHP (FIG. 12) andthe substrate platform PASS8 (FIG. 13). The contents of processing forthe substrate Win the development processing chambers 33, 34 and thelower thermal processing section 104 are respectively similar to thecontents of processing for the substrate W in the above-mentioneddevelopment processing chambers 31, 32 and the upper thermal processingsection 103.

In the cleaning drying processing block 14A, the transport mechanism 141(FIG. 1) sequentially transports the substrate W that is placed on eachof the placement buffer units P-BF1, P-BF2 (FIG. 13) to the cleaningdrying processing unit SD1 (FIG. 2) and the placement cooling unit P-CP(FIG. 13). In this case, the cleaning and drying processing for thesubstrate W are performed in the cleaning drying processing unit SD1,and then the substrate W is cooled in the placement cooling unit P-CP toa temperature suitable for the exposure processing by the exposuredevice 15 (FIG. 1).

The transport mechanism 142 (FIG. 1) sequentially transports thesubstrate W after the exposure processing that is placed on thesubstrate platform PASS9 (FIG. 13) to the cleaning drying processingunit SD2 (FIG. 12), and the thermal processing unit PHP (FIG. 12) in theupper thermal processing section 103 or the lower thermal processingsection 104. In this case, the cleaning and drying processing for thesubstrate W are performed in the cleaning drying processing unit SD2,and then the exposure bake (PEB) processing is performed in the thermalprocessing unit PHP.

In the carry-in carry-out block 14B, the transport mechanism 143(FIG. 1) transports the substrate W before the exposure processing thatis placed on the placement cooling unit P-CP (FIG. 13) to the exposuredevice 15. Further, the transport mechanism 143 (FIG. 1) takes out thesubstrate W after the exposure processing from the exposure device 15and transports the substrate W to the substrate platform PASS9 (FIG.13).

(8) Effects

In the present embodiment, the load P1 applied to the back surface ofthe substrate W by the cleaning head 311 during the back surfacecleaning processing for the substrate W is resisted by the reactionforce P2 generated by the plurality of auxiliary pins 330. Therefore,even when the cleaning head 311 is pressed against the back surface ofthe substrate W, the substrate W is prevented from bending. Thus, thepolishing surface 311 a of the cleaning head 311 can uniformly abutagainst the back surface of the substrate W, and the uniform load P1 canbe applied to the back surface of the substrate W for sufficientcleaning. As a result, foreign matter firmly adhering to the backsurface of the substrate W, a coating film that is formed when thecoating liquid flows to the back surface of the substrate W, foreignmatter mixed with the coating film and the like can be reliably removed.

Further, in the present embodiment, because the inclined surface 333 ofthe auxiliary pin 330 abuts against the bevel portion 1 close to thesurface to be processed of the substrate W, it is possible to generatethe reaction force P2 against the load P1 applied to the back surface ofthe substrate W without damaging the resist film R formed on the surfaceto be processed of the substrate W.

(9) First Modified Example

FIG. 14 is a side view showing a configuration of a cleaning dryingprocessing unit SD1 in the first modified example. The cleaning dryingprocessing unit SD1 in the first modified example has the configurationsimilar to that of the cleaning drying processing unit SD1 of FIG. 4except that the cleaning unit 300 further includes the second cleaningmechanism 320 in addition to the first cleaning mechanism 310. As shownin FIG. 14, the second cleaning mechanism 320 includes a cleaning brush321, a brush holding member (a brush holder) 322, a cleaning nozzle 323and a brush moving mechanism (a brush mover) 324.

The cleaning brush 321 is substantially columnar and formed of a sponge,for example. The cleaning brush 321 is held by the brush holding member322. A groove 321 a having a V-shaped cross section is formed at anouter peripheral surface of the cleaning brush 321. A liquid supply pipe(not shown) to which a cleaning liquid is supplied is connected to thecleaning nozzle 323. A discharge port of the cleaning nozzle 323 isdirected towards surroundings of the upper end of the cleaning brush321. The brush moving mechanism 324 moves the brush holding member 322.Thus, the cleaning brush 321 is moved in the horizontal and verticaldirections.

In the first modified example of the cleaning drying processing unitSD1, back surface cleaning processing by the first cleaning mechanism310 is performed, and then back surface cleaning processing and outerperipheral end cleaning processing by the second cleaning mechanism 320are sequentially performed before drying processing. FIG. 15 is a sideview for explaining the back surface cleaning processing for thesubstrate W by the second cleaning mechanism 320.

As shown in FIG. 15, during the back surface cleaning processing for thesubstrate W, with the substrate W rotated by the spin chuck 210, thecleaning brush 321 is moved to a position directly downward of thesubstrate W. Then, with the upper surface of the cleaning brush 321 andthe back surface of the substrate W in contact with each other, thecleaning brush 321 is moved between the center portion and theperipheral portion of the back surface of the substrate W. The cleaningliquid is supplied to a contact portion between the substrate W and thecleaning brush 321 from the cleaning nozzle 323. Thus, the entire backsurface of the substrate W is cleaned by the cleaning brush 321, andcontaminants adhering to the back surface of the substrate W areremoved.

FIG. 16 is a side view for explaining the outer peripheral end cleaningprocessing for the substrate W by the second cleaning mechanism 320. Asshown in FIG. 16, during the outer peripheral end cleaning processingfor the substrate W, the magnet plate 231 is arranged at the lowerposition, and the magnet plate 232 is arranged at the upper position. Inthis state, the substrate W is rotated by the spin chuck 210. In thiscase, similarly to the back surface cleaning processing for theperipheral portion of the substrate W by the first cleaning mechanism310 in FIG. 10B, each chuck pin 220 is in the closed state in the outerregion R1 of the magnet plate 231, and each chuck pin 220 is in the openstate in the outer region R2 of the magnet plate 232.

In this state, the cleaning brush 321 is moved to a position between theholder 223 of each chuck pin 220 and the outer peripheral end 10 of thesubstrate W in the outer region R2. Then, the groove 321 a of thecleaning brush 321 is pressed against the outer peripheral end 10 of thesubstrate W. The cleaning liquid is supplied to a contact portionbetween the cleaning brush 321 and the substrate W from the cleaningnozzle 323. Thus, the entire outer peripheral end 10 of the substrate Wis cleaned, and contaminants adhering to the outer peripheral end 10 ofthe substrate W are removed.

The back surface cleaning processing for the substrate W by the secondcleaning mechanism 320 of FIG. 15 may be continuously performed afterthe back surface cleaning processing for the center portion of thesubstrate W by the first cleaning mechanism 310 of FIG. 10A. Further,the outer peripheral end cleaning processing for the substrate W by thesecond cleaning mechanism 320 of FIG. 16 may be continuously performedafter the back surface cleaning processing for the peripheral portion ofthe substrate W by the first cleaning mechanism 310 of FIG. 10B.

In this manner, in the cleaning drying processing unit SD1 according tothe first modified example, the surface, the back surface and the outerperipheral end 10 of the substrate W are cleaned by the first cleaningmechanism 310 and the second cleaning mechanism 320. Thus, differenttypes of foreign matter adhering to the substrate W can be appropriatelyremoved. Further, in this configuration, the cleaning nozzle 313 doesnot have to be provided in the first cleaning mechanism 310.

While the cleaning unit 300 includes the one first cleaning mechanism310 in the cleaning drying processing unit SD1 of FIG. 5 or 14, thepresent invention is not limited to this. The cleaning unit 300 mayinclude a plurality of first cleaning mechanisms 310 having differentroughnesses of polishing surfaces 311 a of cleaning heads 311. In thiscase, the substrate W is cleaned by one first cleaning mechanism 310including a cleaning head 311 with a rough polishing surface 311 a, andthen the substrate W is cleaned by another first cleaning mechanism 310including a cleaning head 311 with a fine (smooth) polishing surface 311a. Thus, different types of foreign matter adhering to the substrate Wcan be more appropriately removed.

While the cleaning unit 300 includes the one second cleaning mechanism320 in the cleaning drying processing unit SD1 of FIG. 14, the presentinvention is not limited to this. The cleaning unit 300 may include aplurality of second cleaning mechanisms 320. In this case, the backsurface of the substrate W is cleaned by one second cleaning mechanism320, and the outer peripheral end 10 of the substrate W can be cleanedby another second cleaning mechanism 320. Thus, the back surfacecleaning processing and the outer peripheral end cleaning processing canbe simultaneously performed.

In the cleaning drying processing unit SD1 of the first modifiedexample, the head moving mechanism 314 and the brush moving mechanism324 may be realized by a common moving mechanism. Further, as shown inthe above-mentioned example, in the case where a plurality of firstcleaning mechanisms 310 or a plurality of second cleaning mechanisms 320are provided in the cleaning unit 300, part of or all of the pluralityof head moving mechanisms 314 and the plurality of brush movingmechanisms 324 may be realized by a common moving mechanism.

(10) Second Modified Example

In the cleaning drying processing unit SD1 of the first modifiedexample, the back surface cleaning processing by the first cleaningmechanism 310 ends, and then the back surface cleaning processing by thesecond cleaning mechanism 320 is performed. However, the presentinvention is not limited to this. The back surface cleaning processingby the second cleaning mechanism 320 may be performed before the backsurface cleaning processing by the first cleaning mechanism 310 ends.FIG. 17 is a schematic plan view showing a configuration of the cleaningdrying processing unit SD1 of the second modified example. In FIG. 17,the chuck pins 220 and the auxiliary pins 330 are not shown.

As shown in FIG. 17, in the case where not performing the back surfacecleaning processing, the first cleaning mechanism 310 waits at aposition near one side of the rotation holding unit 200 and below thesubstrate W while extending in one direction. The cleaning head 311 isattached to one end of the head holding member 312. A position at whichthe cleaning head 311 is arranged during a period during which the firstcleaning mechanism 310 waits is referred to as a head waiting positionp1. In FIG. 17, the head waiting position p1 is indicated by a two-dotsand dash line.

When the back surface cleaning processing by the first cleaningmechanism 310 is performed, the head holding member 312 is rotated abouta center axis 312 a at the other end of the head holding member 312.Thus, as indicated by a thick arrow al in FIG. 17, at a height lowerthan the substrate W, the cleaning head 311 is moved between a positionopposite to the center of the substrate W held by the spin chuck 200 andthe head waiting position p1. Further, the height of the head holdingmember 312 is adjusted such that the polishing surface 311 a of thecleaning head 311 comes into contact with the back surface of thesubstrate W.

In the case where not performing the back surface cleaning processing,the second cleaning mechanism 320 waits at a position near the otherside of the rotation holding unit 200 and below the substrate W whileextending in the one direction. The cleaning brush 321 is attached toone end of the brush holding member 322. A position at which thecleaning brush 321 is arranged during a period during which the secondcleaning mechanism 320 waits is referred to as a brush waiting positionp2. In FIG. 17, the brush waiting position p2 is indicated by a two-dotsand dash line.

In the case where the back surface cleaning processing by the cleaningbrush 321 is performed, the brush holding member 322 is rotated about acenter axis 322 a at the other end of the brush holding member 322.Thus, as indicated by a thick arrow a2 in FIG. 17, at a height lowerthan the substrate W, the cleaning brush 321 is moved between a positionopposite to the center of the substrate W held by the spin chuck 200 andthe brush waiting position p2. Further, the height of the brush holdingmember 322 is adjusted such that the upper surface of the cleaning brush321 comes into contact with the back surface of the substrate W.

In the cleaning drying processing unit SD1, in the case where the headholding member 312 and the brush holding member 322 are simultaneouslyrotated, a region in which the head holding member 312 and the brushholding member 322 may interfere with each other is defined as aninterference region ‘if’. The interference region ‘if’ is an overlapregion between a rotational track of the head holding member 312 and arotational track of the brush holding member 322.

FIGS. 18A to 18C are schematic side views showing an operation of thecleaning drying processing unit SD1 of FIG. 17 during the back surfacecleaning processing. In FIGS. 18A to 18C, the rotation holding unit 200and the auxiliary pins 330 are not shown.

At the time of start of the back surface cleaning processing, thesubstrate W held by the rotation holding unit 200 of FIG. 17 is rotatedat a predetermined speed. Further, the cleaning head 311 of the firstcleaning mechanism 310 and the cleaning brush 321 of the second cleaningmechanism 320 are respectively positioned at the head waiting positionp1 and the brush waiting position p2 at the height lower than thesubstrate W.

Next, as indicated by a one-dot and dash arrow in FIG. 18A, the cleaninghead 311 is moved to a position directly downward of the center of thesubstrate W, and then the polishing surface 311 a comes into contactwith the back surface of the substrate W by lifting of the cleaning head311. Thus, the center of the back surface of the substrate W is polishedby the cleaning head 311.

Thereafter, as indicated by a one-dot and dash arrow in FIG. 18B, thecleaning head 311 is moved to a position on the outer peripheral end ofthe substrate W. Thus, the back surface of the substrate W is polishedfrom the center towards the outer peripheral end. During the polishingof the substrate W, the cleaning liquid is supplied to the substrate Wfrom the cleaning nozzle 313 of FIG. 17. Therefore, contaminantsstripped off from the back surface of the substrate W by the polishingare cleaned away by the cleaning liquid.

As indicated by a two-dots and dash arrow in FIG. 18B, when the headholding member 312 is moved to a position outside of the interferenceregion ‘if’, the cleaning brush 321 is moved to a position directlydownward of the center of the substrate W, and then the upper surfacecomes into contact with the back surface of the substrate W by liftingof the cleaning brush 321. Thus, the center of the back surface of thesubstrate W is cleaned by the cleaning brush 321.

Thereafter, as indicated by a two-dots and dash arrow in FIG. 18C, thecleaning brush 321 is moved to a position on the outer peripheral end ofthe substrate W. Thus, the back surface of the substrate W is cleanedfrom the center towards the outer peripheral end. During the cleaning ofthe substrate W, the cleaning liquid is supplied to the substrate W fromthe cleaning nozzle 323 of FIG. 17. Therefore, contaminants stripped offfrom the back surface of the substrate W by the polishing are cleanedaway by the cleaning liquid.

The back surface cleaning processing for the substrate W ends when thecleaning head 311 and the cleaning brush 321 respectively return to thehead waiting position p1 and the brush waiting position p2. Thisconfiguration enables the back surface cleaning processing by the firstcleaning mechanism 310 and the back surface cleaning processing by thesecond cleaning mechanism 320 to be simultaneously performed with nointerference between the head holding member 312 and the brush holdingmember 322.

[2] Second Embodiment

As for a substrate cleaning device and a substrate processing apparatusaccording to the second embodiment, differences from the substratecleaning device and the substrate processing apparatus according to thefirst embodiment will be described. FIG. 19 is a partial longitudinalcross sectional view showing a configuration of a cleaning dryingprocessing unit SD1 in the second embodiment of the present invention.FIG. 20 is an enlarged side view of a cleaning head 311 in the cleaningdrying processing unit SD1 of FIG. 19. As shown in FIG. 19, in thepresent embodiment, a cleaning unit 300 does not include a plurality ofauxiliary pins 330.

Further, in the present embodiment, the shape of a holder 223 of eachchuck pin 220 is different from the shape of the holder 223 of eachchuck pin 220 of FIG. 4. In the example of FIG. 19, a lower portion ofthe holder 223 has a truncated cone-shape, and an upper portion of theholder 223 is columnar. A diameter in a horizontal plane of the chuckpin 220 gradually decreases upward in a truncated cone-shaped portionand is constant in a columnar portion. In this case, the substrate W isheld by the plurality of holders 223 with the bevel portion 1 (FIG. 6A)not abutting against each holder 223.

An opening 331 b penetrating a polishing surface 311 a in the verticaldirection is formed in a cleaning head 311 of a first cleaning mechanism310 of FIG. 19. The first cleaning mechanism 310 further includes asuction driving mechanism 315. The suction driving mechanism 315 is anaspirator, for example, and sucks the back surface of the substrate Wthrough the opening 311 b of the cleaning head 311. As shown in FIG. 20,during the back surface cleaning processing for the substrate W, theback surface of the substrate W is cleaned by the cleaning head 311while the substrate W is sucked by the cleaning head 311 from theopening 311 b.

In this case, even in the case where the load P1 is applied to any ofthe center portion and the peripheral portion of the back surface of thesubstrate W by the polishing surface 311 a of the cleaning head 311, thereaction force P2 against the load P1 is generated in the substrate Wwith the coating film formed on the surface to be processed of thesubstrate W not damaged by suction. Thus, bending of the substrate W inthe case where the load P1 is applied by the cleaning head 311 isprevented. Further, the load P1 can be applied with uniform pressure bythe polishing surface 311 a of the cleaning head 311 to the entire backsurface of the substrate W. As a result, the entire back surface of thesubstrate W can be uniformly cleaned while the load P1 applied to thecenter portion and the peripheral portion of the back surface of thesubstrate W is uniformly maintained.

Further, in the present embodiment, the bevel portion 1 of the substrateW does not come into contact with another member including the chuckpins 220. Therefore, even in the case where the polishing surface 311 aof the cleaning head 311 is pressed against the back surface of thesubstrate W, the back surface of the substrate W can be cleaned with thebevel portion 1 of the substrate W not damaged.

Further, in the present embodiment, foreign matter such as particlesgenerated by the cleaning of the back surface of the substrate W andimpurities such as the cleaning liquid used in the cleaning processingfor the substrate W can be sucked from the opening 311 b to bedischarged. Thus, the cleaning head 311 can be easily kept clean.Therefore, the first cleaning mechanism 310 does not have to include thecleaning nozzle 313. Because work for discharging the foreign matter tooutside is unnecessary, efficiency of the cleaning can be improved.

[3] Other Embodiments

(1) While the cleaning drying processing unit SD1 is provided in theinterface block 14 of the substrate processing apparatus 100 in theabove-mentioned embodiment, the present invention is not limited tothis. The cleaning drying processing unit SD1 may be provided in thecoating block 12, the development block 13 or another block of thesubstrate processing apparatus 100. Alternatively, the cleaning dryingprocessing unit SD1 does not have to be provided in the substrateprocessing apparatus 100 and may be independently provided as asubstrate cleaning device for cleaning the back surface of the substrateW.

FIG. 21 is a schematic plan view of a substrate cleaning unit includinga substrate cleaning device. As shown in FIG. 21, the substrate cleaningunit (a substrate cleaner) 20 includes an indexer block 11 and acleaning drying processing block 14A. The indexer block 11 of FIG. 21has a configuration similar to that of the indexer block 11 of FIG. 1.Further, the cleaning drying processing block 14A has the configurationsimilar to that of the cleaning drying processing block 14A of FIG. 1except for having a buffer unit (a buffer) 164. The cleaning dryingprocessing block 14A of FIG. 21 does not have to have the buffer unit164 similarly to the cleaning drying processing block 14A of FIG. 1.

The cleaning processing by the substrate cleaning unit 20 will bedescribed. In the indexer block 11, each carrier 113 in which thesubstrates W to be processed are stored is placed on each carrierplatform 111. The transport mechanism 115 transports the substrate Wfrom the carrier 113 to each of the substrate platforms PASS1, PASS3(FIG. 13). Further, the transport mechanism 115 transports the processedsubstrate W that is placed on each of the substrate platforms PASS2,PASS4 (FIG. 13) to the carrier 113.

In the cleaning drying processing block 14A, the transport mechanism 141transports the substrate W placed on each of the substrate platformsPASS1, PASS3 to any cleaning drying processing unit SD1 (FIG. 2) in thecleaning drying processing section 161. In this case, cleaning anddrying processing for the substrate W are performed in the cleaningdrying processing unit SD1. The transport mechanism 141 transports thesubstrate W that is cleaned and dried by the cleaning drying processingunit SD1 to each of the substrate platforms PASS2, PASS4.

During the transport of the substrate W from each of the substrateplatforms PASS1, PASS3 to the cleaning drying processing section 161,all of the cleaning drying processing units SD1 are sometimes underexecution of the cleaning and drying processing for the substrates W. Inthis case, none of the cleaning drying processing units SD1 can receivethe substrate W. Then, in such a case, the transport mechanism 141transports the substrate W to the buffer unit 164. After any cleaningdrying processing unit SD1 becomes able to receive the substrate W, thetransport mechanism 141 transports the substrate W in the buffer unit164 to the cleaning drying processing unit SD1.

The transport mechanism 142 transports the substrate W placed on each ofthe substrate platforms PASS1, PASS3 to any cleaning drying processingunit SD2 in the cleaning drying processing section 162 (FIG. 12). Inthis case, the cleaning and drying processing for the substrate Wsimilar to those performed in the cleaning drying processing unit SD1are performed in the cleaning drying processing unit SD2. The transportmechanism 142 transports the substrate W that is cleaned and dried bythe cleaning drying processing unit SD2 to each of the substrateplatforms PASS2, PASS4.

During the transport of the substrate W from each of the substrateplatforms PASS1, PASS3 to the cleaning drying processing section 162,all of the cleaning drying processing units SD2 are sometimes underexecution of the cleaning and drying processing for the substrate W. Inthis case, none of the cleaning drying processing units SD2 can receivethe substrate W. Then, in such a case, the transport mechanism 142transports the substrate W to the buffer unit 164. After any cleaningdrying processing unit SD2 becomes able to receive the substrate W, thetransport mechanism 142 transports the substrate W in the buffer unit164 to the cleaning drying processing unit SD2.

While the four cleaning drying processing units SD1 are provided in thecleaning drying processing section 161 in the example of FIG. 2, thepresent invention is not limited to this. In the cleaning dryingprocessing section 161, three or less than three cleaning dryingprocessing units SD1 may be provided, or five or more than five cleaningdrying processing units SD1 may be provided. While the five cleaningdrying processing units SD2 are provided in the cleaning dryingprocessing section 162 in the example of FIG. 12, the present inventionis not limited to this. In the cleaning drying processing section 162,four or less than four cleaning drying processing units SD2 may beprovided, or six or more than six cleaning drying processing units SD2may be provided.

(2) While the eight chuck pins 220 are arranged at angular intervals of45 degrees in the above-mentioned embodiment, the present invention isnot limited to this. The number of the chuck pins 220 and the angularintervals at which the chuck pins 220 are arranged may be arbitrarilydetermined according to the measurement of the substrate W. Similarly,although the eight auxiliary pins 330 are arranged at intervals of 45degrees in the first embodiment, the present invention is not limited tothis. The number of the auxiliary pins 330 and the angular intervals atwhich the auxiliary pins 330 are arranged may be arbitrarily determinedaccording to the measurement of the substrate W.

(3) While a mechanism for sucking the substrate W is not provided in thefirst cleaning mechanism 310 in the first embodiment, the presentinvention is not limited to this. In the first cleaning mechanism 310 ofthe first embodiment, the suction driving mechanism 315 similar to thatof the second embodiment may be provided, and the opening 311 b may beformed in the cleaning head 311.

Similarly, although the cleaning unit 300 does not have the plurality ofauxiliary pins 330 in the second embodiment, the present invention isnot limited to this. The cleaning unit 300 of the second embodiment mayhave the plurality of auxiliary pins 330 similar to those of the firstembodiment.

(4) While the switcher 230 switches the states of the chuck pins 220between the open state and the closed state by the magnetic force in theabove-mentioned embodiment, the present invention is not limited tothis. The switcher 230 may switch the states of the chuck pins 220between the closed state and the open state by a mechanicalconfiguration or electrical control.

(5) In the above-mentioned embodiment, the chuck pins 220 of thecleaning drying processing unit SD1 hold the substrate W below the spinplate 213 such that the back surface of the substrate W is directeddownward. However, the present invention is not limited to this. Thechuck pins 220 may hold the substrate W above the spin plate 213 suchthat the back surface of the substrate W is directed upward. In thiscase, the cleaning unit 300 is arranged in an upper portion of thecleaning drying processing unit SD1, and the back surface of thesubstrate W is cleaned by a lower surface of the cleaning head 311.

(6) While the exposure device 15 is a dry exposure device in theabove-mentioned embodiment, the present invention is not limited tothis. The exposure device 15 may be a liquid immersion exposure device,for example. In this case, in the substrate processing apparatus 100, aresist cover film (topcoating) may further be formed on the resist filmof the substrate W.

[4] Correspondences between Constituent Elements in Claims and Parts inPreferred Embodiments

In the following paragraphs, non-limiting examples of correspondencesbetween various elements recited in the claims below and those describedabove with respect to various preferred embodiments of the presentinvention are explained.

In the above-mentioned embodiment, the substrate W is an example of asubstrate, the peripheral portion PE is an example of a peripheralportion, the outer peripheral end 10 is an example of an outerperipheral end, the bevel portions 1, 2 are respectively examples of abevel portion closer to a surface to be processed and a bevel portioncloser to a back surface, and the end surface 3 is an example of an endsurface. The cleaning drying processing unit SD1 is an example of asubstrate cleaner, the rotation holding unit 200 is an example of arotation holder, the cleaning unit 300 is an example of a cleaner, andthe rotation shaft 212 is an example of a rotation shaft.

The spin plate 213 is an example of a rotator, the chuck pin 220 is anexample of a holder, the cleaning head 311 is an example of a cleaningtool, and the head moving mechanism 314 is an example of a mover. Theauxiliary pin 330 is an example of a reaction force generator and anabutment, the inclined surface 333 is an example of an abutment surface,the switcher 230 is an example of a holder switcher, and the outerregions R1, R2 are respectively examples of first and second regions.

The suction driving mechanism 315 is an example of a reaction forcegenerator and a suction, the polishing surface 311 a is an example of apolishing surface, the opening 311 b is an example of an opening, andthe cleaning nozzle 313 is an example of a cleaning liquid supplier. Thecleaning brush 321 is an example of a cleaning brush, the processingliquid nozzle 28 is an example of a film former, the edge rinse nozzle30 is an example of a remover, and the substrate processing apparatus100 is an example of a substrate processing apparatus.

As each of constituent elements recited in the claims, various otherelements having configurations or functions described in the claims canbe also used.

While preferred embodiments of the present invention have been describedabove, it is to be understood that variations and modifications will beapparent to those skilled in the art without departing the scope andspirit of the present invention. The scope of the present invention,therefore, is to be determined solely by the following claims.

INDUSTRIAL APPLICABILITY

The present invention can be effectively utilized for cleaningprocessing for back surfaces of various types of substrates.

I/we claim:
 1. A substrate cleaning method for cleaning a back surfaceof a substrate including the steps of: holding and rotating thesubstrate by a rotation holder; and cleaning the back surface of thesubstrate held by the rotation holder by a cleaner, wherein the step ofholding and rotating the substrate includes making a plurality ofholders provided at a rotator abut against and hold a plurality ofportions of an outer peripheral end of the substrate, and rotating therotator about a rotation axis, and the step of cleaning includes movinga cleaning tool by a mover while pressing the cleaning tool against theback surface of the substrate held by the plurality of holders by themover, removing foreign matter on the back surface of the substrate bypolishing with the cleaning tool, and generating a reaction force in thesubstrate by a reaction force generator against a load applied to theback surface of the substrate by the cleaning tool.
 2. A substrateprocessing method including the steps of: forming a coating film on asurface to be processed by supplying a coating liquid to the surface tobe processed of a substrate; supplying a removal liquid for removing thecoating film formed on a peripheral portion of the surface to beprocessed of the substrate to the peripheral portion of the substrate;and cleaning a back surface of the substrate from which the coating filmon the peripheral portion of the surface to be processed is removed byusing the substrate cleaning method according to claim
 1. 3. A substratecleaning method for cleaning a back surface of a substrate, includingthe steps of: holding and rotating the substrate by a rotation holder;cleaning the back surface of the substrate held by the rotation holderby a cleaner, wherein the step of holding and rotating the substrateincludes making a plurality of holders provided at a rotator abutagainst and hold a plurality of portions of an outer peripheral end ofthe substrate, and rotating the rotator about a rotation axis, and thestep of cleaning includes moving a cleaning tool by a mover whilepressing the cleaning tool against the back surface of the substrateheld by the plurality of holders by the mover, removing foreign matteron the back surface of the substrate by polishing with the cleaningtool, and further cleaning the back surface of the substrate, which hasbeen cleaned or is being cleaned by the cleaning tool, by a cleaningbrush.
 4. A substrate processing method including the steps of: forminga coating film on a surface to be processed by supplying a coatingliquid to the surface to be processed of a substrate; supplying aremoval liquid for removing the coating film formed on a peripheralportion of the surface to be processed of the substrate to theperipheral portion of the substrate; and cleaning a back surface of thesubstrate from which the coating film on the peripheral portion of thesurface to be processed is removed by using the substrate cleaningmethod according to claim 3.